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| Ordering number:ENN6126 P-Channel Silicon MOSFET 5LP02M Ultrahigh-Speed Switching Applications Features * Low ON resistance. * Ultrahigh-speed switching. * 2.5V drive. Package Dimensions unit:mm 2158 [5LP02M] 0.425 0.15 3 2.1 1.250 0 to 0.1 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 0.2 0.3 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions 1 : Gate 2 : Source 3 : Drain SANYO : MCP Ratings -50 10 -0.14 -0.56 0.15 150 -55 to +150 Unit V V A A W C C Electrical Characteristics at Ta = 25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 ID=-1mA, VGS=0 VDS=-50V, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=-100A VDS=-10V, ID=-70mA ID=-70mA, VGS=-4V ID=-40mA, VGS=-2.5V ID=-10mA, VGS=-1.5V -0.4 0.17 0.24 5.1 6 10 6.6 8.4 20 Conditions Ratings min -50 -10 10 -1.4 typ max Unit V A A V S Marking : XE Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31000TS (KOTO) TA-1854 No.6126-1/4 5LP02M Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=-10V, VGS=-10V, ID=-140mA VDS=-10V, VGS=-10V, ID=-140mA VDS=-10V, VGS=-10V, ID=-140mA IS=-140mA, VGS=0 Conditions Ratings min typ 28 11 3.5 20 45 250 120 1.98 0.22 0.33 0.83 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 0V --4V VIN VIN VDD=--25V ID=--70mA RL=357 PW=10s D.C.1% D G VOUT 5LP02M P.G 50 S --0.14 ID -- VDS V --2 .5V --2 .0V --3 .0 --0.30 ID -- VGS 5C Ta=-2 --0.12 --4.0V --3.5V --0.25 Drain Current, ID - A --0.10 Drain Current, ID - A --0.20 --0.08 --6. 0 V --0.15 --0.06 VGS=--1.5V --0.04 --0.10 --0.02 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 --0.05 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 Drain-to-Source Voltage, VDS - V 10 9 IT00287 10 Gate-to-Source Voltage, VGS - V 75C 25C VDS=--10V IT00288 RDS(on) -- VGS Ta=25C RDS(on) -- ID VGS=--4V Ta=75C 25C Static Drain-to-Source On-State Resistance, RDS(on) - Static Drain-to-Source On-State Resistance, RDS(on) - ID=--70mA 8 7 7 5 40mA 6 5 4 3 2 0 --25C 3 2 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 1.0 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Gate-to-Source Voltage, VGS - V IT00289 Drain Current, ID - A IT00290 No.6126-2/4 5LP02M 100 7 RDS(on) -- ID VGS=--2.5V Static Drain-to-Source On-State Resistance, RDS (on) - 100 7 5 3 2 RDS(on) -- ID VGS=--1.5V Static Drain-to-Source On-State Resistance, RDS (on) - 5 3 2 Ta=75C 10 7 5 3 2 1.0 --0.001 10 7 5 Ta=75C --25C 25C --25C 3 2 25C 1.0 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --0.01 2 3 5 7 --0.1 Drain Current, ID - A 12 IT00291 1.0 Drain Current, ID - A IT00292 RDS(on) -- Ta Forward Transfer Admittance, | yfs | - S yfs -- ID 25 7 5 3 2 VDS=--10V -Ta= C Static Drain-to-Source On-State Resistance, RDS (on) - 10 8 6 --40 ID= 4 .0 =--4 V GS A, 0m =--7 ID mA , =--2 V GS .5V 75C V 25C 0.1 7 5 3 2 2 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 0.01 --0.01 2 3 5 7 --0.1 2 3 5 Ambient Temperature, Ta - C --1.0 7 5 IT00293 1000 7 Drain Current, ID - A 7 --1.0 IT00294 IF -- VSD VGS=0 Switching Time, SW Time - ns SW Time -- ID VDD=--25V VGS=--4V td(off) tf 5 3 2 Forward Current, IF - A 3 2 --0.1 7 5 3 2 100 7 5 3 2 10 --0.01 tr Ta=75 C --0.01 0 --0.2 --0.4 --0.6 25C --25C td(on) --0.8 --1.0 --1.2 --1.4 2 3 5 7 --0.1 2 IT00296 Diode Forward Voltage, VSD - V 100 7 5 IT00295 --10 Drain Current, ID - A Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS - V VGS -- Qg VDS=--10V ID=--140mA --9 Ciss, Coss, Crss - pF 3 2 Ciss --8 --7 --6 --5 --4 --3 --2 --1 0 10 7 5 3 2 1.0 0 --5 --10 Coss Crss --15 --20 --25 IT00297 0 0.5 1.0 1.5 2.0 IT00298 Drain-to-Source Voltage, VDS - V Total Gate Charge, Qg - nC No.6126-3/4 5LP02M 0.20 PD -- Ta Allowable Power Dissipation, PD - W 0.15 0.10 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta - C IT00299 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6126-4/4 |
Price & Availability of 5LP02M
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